| 1. | From the experiment results and the normalization results , the surface recombination velocities of silicon pn junction were obtained
通过测量结果和计算结果的归一化比较，获得了其表面复合速率。 |
| 2. | The prevention of the corrosion of reinforced bar by using the smart concrete pn junctions . 1 ) the conductivity of sfrc is tested in experiments
二、应用机敏混凝土进行钢筋锈蚀的防护研究： 1 、试验研究了sfrc的导电能力。 |
| 3. | In order to comprehend schottky gate of organic static induction transistor , chapter two expatiates characteristics of pn junction and schottky junction
为了理解有机静电感应三极管的肖特基栅极原理，本文在第二章阐述了pn结和肖特基结的特性。 |
| 4. | Using this method , the interface characteristics of angle beveled mesa structure high - voltage silicon pn junction protected by organic materials or inorganic passivation films were measured
采用此方法，测量了台面型高压硅半导体器件的无机钝化和有机保护界面的表面复合速率。 |
| 5. | The impacts of the substrate pn junction isolation on the inductor quality factor ( q ) are studied and experimental results show that a certain deep substrate pn junction isolation achieves good improvement
结果表明这种方法是可行的， b一一定深度的衬底pn结隔离能有效的使q值提高。 |
| 6. | Based on the systematic study and analysis , alight spot scanner photo - current ( pc ) measurement technique was set up to measure the interface properties of silicon pn junction
摘要通过系统的研究分析，建立了应用光探针的光电( pc )测量方法，应用镜像法和点源产生近似原理建立了物理模型，并进行了系统的理论分析。 |
| 7. | A model of the sic pn junctions irradiated by neutron is presented . the effects of radiation induced oxide trapped charge and sic / si02 interface state density on inversion layer mobility is studied systematically
在辐照的电离效应方面，研究了辐照在sicmos氧化层中引入的陷阱电荷对mos沟道反型层迁移率的影响。 |
| 8. | The one dimensional continuity equations of n - on - p planar pn junction are solved at different boundary conditions . generalized solutions of photocarrier concentration are given in this paper
摘要对一维情况下平面pn结的连续性方程进行了求解，给出了不同边界条件下光生载流子浓度的一般形式解，并对结果进行了分析讨论。 |
| 9. | According to the analysis of physical quantities in the body , we got a conclusion that the effect of pn junction on schottky is through its depletion layer and the gap between two pn junctions
通过对器件体内各物理量的定量分析，得出pn结对肖特基的作用是通过其耗尽层和两pn结之间的间隙来影响肖特基的导电沟道这一结论。 |
| 10. | Because temperature is a factor in the " diode equation , " and we want the two pn junctions to behave identically under all operating conditions , we should maintain the two transistors at exactly the same temperature
因为温度出现在二极管方程中，为了让两个pn结在所有条件下都具有同样的行为，就必须让两者处在精确相同的温度下。 |
